Growth of GaAs/AlxGa1−xAs layers by LPE method and their characterization by SIMS B. Arghavani Nia, A. Ghaderi, S. Solaymani and M. Oskoie Eur. Phys. J. Appl. Phys., 55 3 (2011) 31303 Published online: 18 August 2011 DOI: 10.1051/epjap/2011110106