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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

D.F. Lin, X.L. Wang, H.L. Xiao, C.M. Wang, L.J. Jiang, C. Feng, H. Chen, Q.F. Hou, Q.W. Deng, Y. Bi and H. Kang

Eur. Phys. J. Appl. Phys., 55 3 (2011) 30104

Published online: 18 August 2011

DOI: 10.1051/epjap/2011110209

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