EPJ

PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8 – 2.2 GHz Band

K. Kassmi, N. Nolhier, P. Rossel, H. Tranduc, P. Kouakou, P. Gola, M. El Hitmy and R. Maimouni

Eur. Phys. J. AP, 5 2 (1999) 171-178

Published online: 15 February 1999

DOI: 10.1051/epjap:1999126

K. Kassmi

N. Nolhier

P. Rossel

H. Tranduc

P. Kouakou

P. Gola

M. El Hitmy

R. Maimouni

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)