EPJ

Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor

R. Bourguiga, H. Sik and A. Scavennec

Eur. Phys. J. AP, 6 3 (1999) 299-301

Published online: 15 June 1999

DOI: 10.1051/epjap:1999187

R. Bourguiga

H. Sik

A. Scavennec

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