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Solid source molecular beam epitaxial growth of In_0.48Ga_0.52P on GaAs substrates using a valved phosphorus cracker cell

S. F. Yoon, K. W. Mah and H. Q. Zheng

Eur. Phys. J. AP, 7 2 (1999) 111-117

Published online: 15 August 1999

DOI: 10.1051/epjap:1999205

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