EPJ

I-V-T measurements on GaAs/AlGaAs heterojunctions interpreted on the basis of thermally assisted tunneling

A. Sellai, M. S. Raven and M. Henini

Eur. Phys. J. AP, 9 2 (2000) 131-136

Published online: 15 February 2000

DOI: 10.1051/epjap:2000210

A. Sellai

M. S. Raven

M. Henini

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