EPJ

Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method

A. Poncet, C. Faugeras and M. Mouis

Eur. Phys. J. AP, 15 2 (2001) 117-121

Published online: 15 August 2001

DOI: 10.1051/epjap:2001103

A. Poncet

C. Faugeras

M. Mouis

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