EPJ

Depth profiling of P shallow implants in silicon by electron-induced X-ray emission spectroscopy

Ch. Hombourger, Ph. Jonnard, Ch. Bonnelle and P.-F. Staub

Eur. Phys. J. Appl. Phys., 24 2 (2003) 115-119

Published online: 20 October 2003

DOI: 10.1051/epjap:2003078

Ch. Hombourger

Ph. Jonnard

Ch. Bonnelle

P.-F. Staub

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)