EPJ

Growth of ultra-thin and highly relaxed SiGe layers under in-situ introduction of point defects

K. Lyutovich, M. Oehme and F. Ernst

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 341-344

Published online: 15 July 2004

DOI: 10.1051/epjap:2004051

K. Lyutovich

M. Oehme

F. Ernst

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)