EPJ

Characterization of metastable defects in hydrogen-implanted n-type silicon

T. Sugiyama, Y. Tokuda, S. Kanazawa and M. Ishiko

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 137-139

Published online: 15 July 2004

DOI: 10.1051/epjap:2004074

T. Sugiyama

Y. Tokuda

S. Kanazawa

M. Ishiko

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