EPJ

Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation

Y. Tokuda, T. Sugiyama, S. Kanazawa, H. Iwata and M. Ishiko

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 111-114

Published online: 15 July 2004

DOI: 10.1051/epjap:2004114

Y. Tokuda

T. Sugiyama

S. Kanazawa

H. Iwata

M. Ishiko

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