EPJ

Study of dislocations in strained-Si/Si_0.8Ge_0.2 heterostructures by EBIC, TEM and etching techniques

X. L. Yuan, T. Sekiguchi, S. G. Ri and S. Ito

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 337-340

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-7

X. L. Yuan

T. Sekiguchi

S. G. Ri

S. Ito

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