EPJ

Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM

T. Umeda, A. Toda and Y. Mochizuki

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 13-19

Published online: 15 July 2004

DOI: 10.1051/epjap:2004123

T. Umeda

A. Toda

Y. Mochizuki

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