Post-annealed silicon nanocrystal formation on substoichiometric SiOxNy (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges
Eur. Phys. J. Appl. Phys., 34 2 (2006) 147-150
Published online: 25 May 2006
DOI: 10.1051/epjap:2006050