EPJ

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

U. Künecke and P. J. Wellmann

Eur. Phys. J. Appl. Phys., 34 3 (2006) 209-213

Published online: 24 June 2006

DOI: 10.1051/epjap:2006055

U. Künecke

P. J. Wellmann

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