EPJ

Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

E. Ozturk, M. K. Bahar and I. Sokmen

Eur. Phys. J. Appl. Phys., 41 3 (2008) 195-200

Published online: 12 March 2008

DOI: 10.1051/epjap:2008018

E. Ozturk

M. K. Bahar

I. Sokmen

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