EPJ

Modelling of parasitic effects induced by electrically active defects in a SiGe HBT

M. Lakhdara, S. Latreche and C. Gontrand

Eur. Phys. J. Appl. Phys., 43 1 (2008) 55-63

Published online: 24 June 2008

DOI: 10.1051/epjap:2008134

M. Lakhdara

S. Latreche

C. Gontrand

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)