EPJ

Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C

M. Labrune, X. Bril, G. Patriarche, L. Largeau, O. Mauguin and P. Roca i Cabarrocas

EPJ Photovolt., 3 (2012) 30303

Published online: 13 November 2012

DOI: 10.1051/epjpv/2012010

M. Labrune

X. Bril

G. Patriarche

L. Largeau

O. Mauguin

P. Roca i Cabarrocas

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