EPJ

Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations

K. Köksal, B. Gönül and M. Oduncuoğlu

Eur. Phys. J. B, 69 2 (2009) 211-218

Published online: 05 May 2009

DOI: 10.1140/epjb/e2009-00151-2

K. Köksal

B. Gönül

M. Oduncuoğlu

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