Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy M. Ye, Y. T. Cui, Y. Nishimura, Y. Yamada, S. Qiao, A. Kimura, M. Nakatake, H. Namatame and M. Taniguchi Eur. Phys. J. B, 75 1 (2010) 31-35 Published online: 02 February 2010 DOI: 10.1140/epjb/e2010-00044-3