Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors
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Eur. Phys. J. B, 85 6 (2012) 186
Published online: 06 June 2012
DOI: 10.1140/epjb/e2012-30070-x