EPJ

First-principles study of the electronic structure of 2 H-, 3C-, 4 H-, and 6 H-silicon carbide under strain

Shuchao Zhang, Changhai Shi, Bangzhao Wang and Zichen Zhang

Eur. Phys. J. B, 98 1 (2025) 15

Published online: 27 January 2025

DOI: 10.1140/epjb/s10051-025-00863-z

Shuchao Zhang

Changhai Shi

Bangzhao Wang

Zichen Zhang

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