A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate
Eur. Phys. J. D, 78 2 (2024) 20
Published online: 12 February 2024
DOI: 10.1140/epjd/s10053-024-00811-z