EPJ

Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices

Rejaiba Omar, Ben Amar Mohamed and Matoussi Adel

Eur. Phys. J. Plus, 130 4 (2015) 80

Published online: 28 April 2015

DOI: 10.1140/epjp/i2015-15080-x

Rejaiba Omar

Ben Amar Mohamed

Matoussi Adel

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