A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases
Eur. Phys. J. Plus, 132 3 (2017) 119
Published online: 08 March 2017
DOI: 10.1140/epjp/i2017-11383-2