EPJ

Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance

Ali Naderi and Hamed Mohammadi

Eur. Phys. J. Plus, 136 6 (2021) 662

Published online: 17 June 2021

DOI: 10.1140/epjp/s13360-021-01661-z

Ali Naderi

Hamed Mohammadi

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