EPJ

High capability of AlGaN/GaN HEMT transistors through innovative vertical field plates

Amir Khaleghparast Sereshkeh and Mahsa Mehrad

Eur. Phys. J. Appl. Phys., 101 (2026) 1

Published online: 13 January 2026

DOI: 10.1051/epjap/2025031

Amir Khaleghparast Sereshkeh

Mahsa Mehrad

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