Electrical relaxation induced by magnetostriction in a MEMS device - Architecture integrating a Co submillimetric pattern of submicrometric holes and a polymeric amplifying layer
and
Eur. Phys. J. B, 76 3 (2010) 399-404
Published online: 16 July 2010
DOI: 10.1140/epjb/e2010-00225-0