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Pecularities of Hall effect in GaAs/δ⟨Mn⟩/GaAs/In_xGa_1-xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

M.A. Pankov, B.A. Aronzon, V.V. Rylkov, A.B. Davydov, V.V. Tugushev, S. Caprara, I.A. Likhachev, E.M. Pashaev, M.A. Chuev, E. Lähderanta et al. (2 more)

Eur. Phys. J. B, 85 6 (2012) 206

Published online: 20 June 2012

DOI: 10.1140/epjb/e2012-30149-4

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Pecularities of Hall effect in GaAs/δ⟨Mn⟩/GaAs/InxGa1-xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

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Pecularities of Hall effect in GaAs/δ⟨Mn⟩/GaAs/In_xGa_1-xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content