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Two-dimensional electron systems in inversion layers of p-type Hg_0.8Zn_0.2Te metal-insulator-semiconductor structures

O. Rousière, D. Lemoine, H. Folliot, S. Hinooda and R. Granger

Eur. Phys. J. B, 11 3 (1999) 491-496

DOI: https://doi.org/10.1007/s100510050960

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