Deposition of functional hydrogenated amorphous carbon-nitride film (a-CN:H) using C2H4/N2 townsend dielectric barrier dischargeC. Sarra-Bournet, N. Gherardi, S. Turgeon, G. Laroche and F. MassinesEur. Phys. J. Appl. Phys., 47 2 (2009) 22820DOI: https://doi.org/10.1051/epjap/2009079