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Temperature mapping of Al_0.85In_0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

M. Gonschorek, D. Simeonov, J.-F. Carlin, E. Feltin, M. A. Py and N. Grandjean

Eur. Phys. J. Appl. Phys., 47 3 (2009) 30301

DOI: https://doi.org/10.1051/epjap/2009091

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