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Growth of GaAs/Al_xGa_1−xAs layers by LPE method and their characterization by SIMS

B. Arghavani Nia, A. Ghaderi, S. Solaymani and M. Oskoie

Eur. Phys. J. Appl. Phys., 55 3 (2011) 31303

DOI: https://doi.org/10.1051/epjap/2011110106

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