Low temperature characteristics of AlGaN/GaN high electron mobility transistorsD.F. Lin, X.L. Wang, H.L. Xiao, C.M. Wang, L.J. Qiang, C. Feng, H. Chen, Q.F. Hou, Q.W. Deng, Y. Bi and H. KangEur. Phys. J. Appl. Phys., 56 1 (2011) 10101DOI: https://doi.org/10.1051/epjap/2011110193