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AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta₂O₅ dielectric

K.H. Lee, P.C. Chang, S.J. Chang and Y.C. Yin

Eur. Phys. J. Appl. Phys., 57 3 (2012) 30102

DOI: https://doi.org/10.1051/epjap/2012110271

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