The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parametersA.F. Özdemir, T. Özsoy, Y. Kansız, M. Sancak, A. Kökce, N. Uçar and D.A. AldemirEur. Phys. J. Appl. Phys., 60 1 (2012) 10101DOI: https://doi.org/10.1051/epjap/2012110483