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Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂ Schottky diodes

A. Bobby, P.S. Gupta and B.K. Antony

Eur. Phys. J. Appl. Phys., 60 1 (2012) 10104

DOI: https://doi.org/10.1051/epjap/2012120343

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