Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristicsAlain Agboton, Nicolas Defrance, Philippe Altuntas, François Lecourt, Yannick Douvry, Virginie Hoel, Ali Soltani and Jean-Claude De JaegerEur. Phys. J. Appl. Phys., 64 2 (2013) 20101DOI: https://doi.org/10.1051/epjap/2013130455