A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors
Eur. Phys. J. Appl. Phys., 72 3 (2015) 30102
DOI: https://doi.org/10.1051/epjap/2015150375
Download citation
Topical Collections
Open calls for papers
-
EPJ AM Call for papers: Themed Issue on Global Advances in Electromagnetic Metasurfaces for Space
(EPJ AM)
-
Call for papers : Special Issue on Imaging, Diffraction, and Spectroscopy on the micro/nanoscale
(EPJ AP)
-
EPJ C Topical Collection on String theory predictions for astroparticle and collider physics, and beyond
(EPJ C)