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Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs

Ogyun Seok, Hyoung Woo Kim, In Ho Kang, Min-Woo Ha and Wook Bahng

Eur. Phys. J. Appl. Phys., 88 3 (2019) 30103

DOI: https://doi.org/10.1051/epjap/2020190269

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