Dislocations in 6H-SiC and their influence on electrical properties of n-type crystalsV. Tillay, F. Pailloux, M. F. Denanot, P. Pirouz, J. Rabier, J. L. Demenet and J. F. BarbotEur. Phys. J. AP, 2 2 (1998) 111-115DOI: https://doi.org/10.1051/epjap:1998173