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Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

R. Bourguiga, F. Garnier, G. Horowitz, R. Hajlaoui, P. Delannoy, M. Hajlaoui and H. Bouchriha

Eur. Phys. J. AP, 14 2 (2001) 121-125

DOI: https://doi.org/10.1051/epjap:2001146

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