Charge transport limited by grain boundaries in polycrystalline octithiophene thin film transistorsR. Bourguiga, G. Horowitz, F. Garnier, R. Hajlaoui, S. Jemai and H. BouchrihaEur. Phys. J. AP, 19 2 (2002) 117-122DOI: https://doi.org/10.1051/epjap:2002057