High-quality GaN on intentionally roughened c-sapphireY. Golan, P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman and J. S. SpeckEur. Phys. J. AP, 22 1 (2003) 11-14DOI: https://doi.org/10.1051/epjap:2003012