Depth profiling of P shallow implants in silicon by electron-induced X-ray emission spectroscopyCh. Hombourger, Ph. Jonnard, Ch. Bonnelle and P.-F. StaubEur. Phys. J. Appl. Phys., 24 2 (2003) 115-119DOI: https://doi.org/10.1051/epjap:2003078