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Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

St. G. Müller, J. J. Sumakeris, M. F. Brady, R. C. Glass, H. McD. Hobgood, J. R. Jenny, R. Leonard, D. P. Malta, M. J. Paisley, A. R. Powell, V. F. Tsvetkov, S. T. Allen, M. K. Das, J. W. Palmour and C. H. Carter

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 29-35

DOI: https://doi.org/10.1051/epjap:2004085

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