Structural characterisation of 4H-SiC substrates by cathodoluminescence and X-ray topographyP. Hidalgo, L. Ottaviani, H. Idrissi, M. Lancin, S. Martinuzzi and B. PichaudEur. Phys. J. Appl. Phys., 27 1-3 (2004) 231-233DOI: https://doi.org/10.1051/epjap:2004100