Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structuresZs. J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F. Riesz, V. I. Vdovin and Z. PásztiEur. Phys. J. Appl. Phys., 27 1-3 (2004) 189-192DOI: https://doi.org/10.1051/epjap:2004106