Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantationY. Tokuda, T. Sugiyama, S. Kanazawa, H. Iwata and M. IshikoEur. Phys. J. Appl. Phys., 27 1-3 (2004) 111-114DOI: https://doi.org/10.1051/epjap:2004114