Influence of high-index GaAs substrates on the 2D electron density of δ-doped pHEMT with an additional InxGa1-xAs (x > 0.15) thin layer embedded in the channel
Eur. Phys. J. Appl. Phys., 29 3 (2005) 209-213
DOI: https://doi.org/10.1051/epjap:2004219
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